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> Refractive index > GaAs | AlAs | AlxGa1-xAs | InxGa1-xAs | ||||||
| > Devices > Bragg mirror | SAM | RSAM | SANOS | SOC | Microchip laser | PCA | |||||||
SANOS™ - Saturable Noise Suppressor |
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| > | Contents | ||||||
| > | How does a SANOS work? | ||||||
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The active element of a SANOS is a resonant
saturable absorber mirror (RSAM) with
zero reflectance for a low power signal at the resonance wavelength.
The RSAM is a nonlinear optical device, having a low reflectance for week optical
signals like noise and a high reflectance for high power signals like optical pulses. |
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A SANOS is mainly characterized by the following
parameters:
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| > | SANOS applications |
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The main applications for SANOS are:
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| > | Free space SANOS (FS-SANOS) | ||||||
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The free space SANOS is devoted to clean a pulsed optical beam from noise. One possible
application is after a pulse picker to suppress the residual pulses, which has been
passed the picker with a low intensity. An other application is to suppress the amplified spontaneous
emission (ASE) of an optical amplifier. |
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| The transmittance T of the FS-SANOS depends on the peak power density I of the input beam according to the nonlinear reflectance of the RSAM. The output beam intensity Iout is related to the input beam intensity I by | |||||||
| Iout = T(I) I | |||||||
| with | |||||||
| T(I) | intensity dependent transmittance. | ||||||
| A typical transmittance curve of a FS-SANOS with one RSAM inside shows the figure above. | |||||||
| > | Fibre coupled SANOS (FC-SANOS) | ||||||
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The fibre coupled SANOS can be used for noise suppression in optical fibre channels.
To reshape an optical signal the passive FC-SANOS can be simply insert into a fibre
channel after an EDFA. Due to the working principle of the SANOS this device reshapes
only the amplitude of one wavelength. |
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| > | Effective saturation fluence Fsat,eff | ||||||
The effective saturation fluence Fsat,eff
of a SANOS can be defined in such a way, that the transmittance T at
Fsat,eff is 50% of the saturated value at
a very large fluence F >> Fsat. |
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| The effective saturation fluence Fsat,eff as a function of the full width at half maximum (FWHM) of the RSAM resonance dip plotted for different RSAM cavity thicknesses. |
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| > | Relaxation time constant t | ||||||
The low temperature grown saturable absorber layer inside the SANOS has a
relaxation time constant t, which can be
varied over a large region from about 100 fs up to 100 ps. A typical value
of the relaxation time t is 1 ps. |
Decrease of the transmittance after saturation with t = 10 ps
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| T(t) = Tmaxexp(-t/t )] | |||||||
| with | |||||||
| T(t) | time dependent transmittace | ||||||
| Tmax | saturated transmittance | ||||||
| t | time | ||||||
| t | relaxation time constant | ||||||
| > | Effective saturation intensity Isat,eff | ||||||
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The effective saturation intensity Isat,eff is related to the
effective saturation fluence Fsat,eff
by Fsat,eff = Isat,eff t. With Fsat,eff = 7 mJ/cm2 and t = 10 ps the effective saturation intensity is Isat,eff = 700 kW/cm2. |
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| > | Bandwidth | ||||||
| The spectral bandwidth of the SANOS is gouverned by the used RSAM bandwidth. A compromise is needed between a large bandwidth and a low saturation fluence Fsat, because the saturation fluence decreases together with the bandwidth. A typical bandwidth (FWHM) of ~ 20 nm is possible for a SANOS with Fsat = 5 µJ/cm2. The usuable spectral bandwidth Dl around the low-intensity minimum transmittance is by a factor of 5 ... 10 smaller than the FWHM and is therefore only some nanometers. | |||||||
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